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| ZXMP6A16DN8 DUAL P-CHANNEL 60V ENHANCEMENT MODE MOSFET SUMMARY V(BR)DSS = -60V; RDS(ON) = 0.085 ; ID= -3.9A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES * Low on-resistance * Fast switching speed * Low threshold * Low gate drive * Low profile SOIC package SO8 APPLICATIONS * DC-DC converters * Power management functions * Disconnect switches * Motor control ORDERING INFORMATION DEVICE ZXMP6A16DN8TA ZXMP6A16DN8TC REEL 7'` 13'` TAPE WIDTH 12mm 12mm QUANTITY PER REEL 500 units 2500 units PINOUT DEVICE MARKING ZXMP 6A16D Top view ISSUE 3 - MAY 2005 1 ZXMP6A16DN8 ABSOLUTE MAXIMUM RATINGS PARAMETER Drain-Source Voltage Gate-Source Voltage Continuous Drain Current@V GS =10V; T A =25 C (b)(d) @V GS =10V; T A =70 C (b)(d) @V GS =10V; T A =25 C (a)(d) Pulsed Drain Current (c) Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) (c) Power Dissipation at TA=25C (a)(d) Linear Derating Factor Power Dissipation at TA=25C (a)(e) Linear Derating Factor Power Dissipation at TA=25C (b)(d) Linear Derating Factor Operating and Storage Temperature Range (b) SYMBOL V DSS V GS ID LIMIT -60 20 -3.9 -3.1 -2.9 -18.3 -3.2 -18.3 1.25 10 1.81 14.5 2.15 17 -55 to +150 UNIT V V A A A A A A W mW/C W mW/C W mW/C C I DM IS I SM PD PD PD T j :T stg THERMAL RESISTANCE PARAMETER Junction to Ambient Junction to Ambient Junction to Ambient NOTES (a) For a dual device surface mounted on 25mm x 25mm FR4 PCB with coverage of single sided 1oz copper in still air conditions. (b) For a dual device surface mounted on FR4 PCB measured at t 10 sec. (a)(d) (b)(e) (b)(d) SYMBOL R JA R JA R JA VALUE 100 70 60 UNIT C/W C/W C/W (c) Repetitive rating 25mm x 25mm FR4 PCB, D=0.05 pulse width=300s - pulse width limited by maximum junction temperature. (d) For a dual device with one active die. (e) For dual device with 2 active die running at equal power. ISSUE 3 - MAY 2005 2 ZXMP6A16DN8 CHARACTERISTICS ISSUE 3 - MAY 2005 3 ZXMP6A16DN8 ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated) PARAMETER STATIC Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Gate-Source Threshold Voltage Static Drain-Source On-State Resistance Forward Transconductance (1)(3) DYNAMIC (3) Input Capacitance Output Capacitance Reverse Transfer Capacitance SWITCHING (2) (3) Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Gate Charge Total Gate Charge Gate-Source Charge Gate-Drain Charge SOURCE-DRAIN DIODE Diode Forward Voltage (1) Reverse Recovery Time (3) Reverse Recovery Charge NOTES (1) Measured under pulsed conditions. Width 300s. Duty cycle 2% . (2) Switching characteristics are independent of operating junction temperature. (3) For design aid only, not subject to production testing. (3) (1) SYMBOL MIN. TYP. MAX. UNIT CONDITIONS V (BR)DSS I DSS I GSS V GS(th) R DS(on) g fs -60 -1.0 100 -1.0 0.085 0.125 7.2 V A nA V I D =-250A, V GS =0V V DS =-60V, V GS =0V V GS = 20V, V DS =0V I D =-250 A, V DS = V GS V GS =-10V, I D =-2.9A V GS =-4.5V, I D =-2.4A S V DS =-15V,I D =-2.9A C iss C oss C rss 1021 83.1 56.4 pF pF pF V DS =-30 V, V GS =0V, f=1MHz t d(on) tr t d(off) tf Qg Qg Q gs Q gd 3.5 4.1 35 10 12.1 24.2 2.5 3.7 ns ns ns ns nC nC nC nC V DS =-30V,V GS =-10V, I D =-2.9A V DS =-30V,V GS =-5V, I D =-2.9A V DD =-30V, I D =-1A R G 6.0, V GS =-10V V SD t rr Q rr -0.85 29.2 39.6 -0.95 V ns nC T J =25C, I S =-3.4A, V GS =0V T J =25C, I F =-2A, di/dt= 100A/s ISSUE 3 - MAY 2005 4 ZXMP6A16DN8 TYPICAL CHARACTERISTICS ISSUE 3 - MAY 2005 5 ZXMP6A16DN8 TYPICAL CHARACTERISTICS ISSUE 3 - MAY 2005 6 ZXMP6A16DN8 PACKAGE OUTLINE CONTROLLING DIMENSIONS ARE IN INCHES APPROX IN MILLIMETERS PACKAGE DIMENSIONS Millimeters DIM Min A A1 D H E L 1.35 0.10 4.80 5.80 3.80 0.40 Max 1.75 0.25 5.00 6.20 4.00 1.27 Min 0.053 0.004 0.189 0.228 0.150 0.016 Max 0.069 0.010 0.197 0.244 0.157 0.050 h e b c Inches DIM Min Max Min Max 1.27 BSC 0.33 0.19 0 0.25 0.51 0.25 8 0.50 0.050 BSC 0.013 0.008 0 0.010 0.020 0.010 8 0.020 Millimeters Inches (c) Zetex Semiconductors plc 2005 Europe Zetex GmbH Streitfeldstrae 19 D-81673 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com Americas Zetex Inc 700 Veterans Memorial Hwy Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com Asia Pacific Zetex (Asia) Ltd 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park Chadderton, Oldham, OL9 9LL United Kingdom Telephone (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com These offices are supported by agents and distributors in major countries world-wide. This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service. For the latest product information, log on to www.zetex.com ISSUE 3 - MAY 2005 7 |
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